Ambipolar all-polymer bulk heterojunction field-effect transistors

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting ...

Unipolar to ambipolar conversion in graphene field-effect transistors

Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters.

Ambipolar perovskite field-effect transistors and inverters with balanced mobilities are demonstrated. Thin-film field-effect-transistor-like inverters are developed, and a maximum gain of 23 in the first quadrant for VDD = 80 V is obtained.

Contact effects in polymer field-effect transistors

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection pr...

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...